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MTE65N20J3 MOSFET Transistor

The MTE65N20J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE65N20J3 transistor as follows.

Circuit diagram symbol of the MTE65N20J3 transistor

MTE65N20J3 Transistor Specification

Transistor Code MTE65N20J3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.061Ohm
Power Dissipation (Maximum) PD 107W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 62nS
Total Gate Charge 60nC

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