MTE65N20F3 MOSFET Transistor

The MTE65N20F3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE65N20F3 transistor as follows.

MTE65N20F3 Transistor Specification

Transistor Code		MTE65N20F3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	168W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		62nS
Total Gate Charge		60nC

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