MTE50N10FP MOSFET Transistor

The MTE50N10FP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE50N10FP transistor as follows.

MTE50N10FP Transistor Specification

Transistor Code		MTE50N10FP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS

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