MTE20N10FP MOSFET Transistor

The MTE20N10FP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE20N10FP transistor as follows.

MTE20N10FP Transistor Specification

Transistor Code		MTE20N10FP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		224pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS

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