MTE1K8N25J3 MOSFET Transistor

The MTE1K8N25J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE1K8N25J3 transistor as follows.

MTE1K8N25J3 Transistor Specification

Transistor Code		MTE1K8N25J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.71Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		13pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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