MTE05N10E3 MOSFET Transistor

The MTE05N10E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE05N10E3 transistor as follows.

MTE05N10E3 Transistor Specification

Transistor Code		MTE05N10E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	140A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0059Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		754pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		46nS
Total Gate Charge		116nC

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