MTE010N10FP MOSFET Transistor

The MTE010N10FP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE010N10FP transistor as follows.

MTE010N10FP Transistor Specification

Transistor Code		MTE010N10FP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0099Ohm
Power Dissipation (Maximum)	PD	37.5W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Total Gate Charge		48nC

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