MTE010N10E3 MOSFET Transistor

The MTE010N10E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE010N10E3 transistor as follows.

MTE010N10E3 Transistor Specification

Transistor Code		MTE010N10E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0096Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Total Gate Charge		48nC

UXPython is not the creator or an official representative of the MTE010N10E3 MOSFET transistor. You can download the official MTE010N10E3 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

SIHFZ34 MOSFET Transistor PSMN7R8-100PSE MOSFET Transistor BUK455-200B MOSFET Transistor ISL9N303AP3 MOSFET Transistor MTB06N03E3 MOSFET Transistor CS220N04A8H MOSFET Transistor HY75N075T MOSFET Transistor IRFB3004GPBF MOSFET Transistor IRF4104PBF MOSFET Transistor SIHF9530 MOSFET Transistor BUK553-60A MOSFET Transistor IXFP5N50P3 MOSFET Transistor BUZ104S MOSFET Transistor SIHP28N65E MOSFET Transistor PJP4NA90 MOSFET Transistor SPP80N05L MOSFET Transistor BUZ101S MOSFET Transistor FMP12N50ES MOSFET Transistor IRFB4620PBF MOSFET Transistor AM40P06-135P MOSFET Transistor