MTDP4953BDYQ8 MOSFET Transistor

The MTDP4953BDYQ8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTDP4953BDYQ8 transistor as follows.

MTDP4953BDYQ8 Transistor Specification

Transistor Code		MTDP4953BDYQ8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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