MTDN8810AT8 MOSFET Transistor

The MTDN8810AT8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTDN8810AT8 transistor as follows.

MTDN8810AT8 Transistor Specification

Transistor Code		MTDN8810AT8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0175Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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