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MTDN8233CDV8 MOSFET Transistor

The MTDN8233CDV8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTDN8233CDV8 transistor as follows.

Circuit diagram symbol of the MTDN8233CDV8 transistor

MTDN8233CDV8 Transistor Specification

Transistor Code MTDN8233CDV8
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0081Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 185pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 64nS

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