MTDE5P10N3 MOSFET Transistor

The MTDE5P10N3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTDE5P10N3 transistor as follows.

MTDE5P10N3 Transistor Specification

Transistor Code		MTDE5P10N3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		16pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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