MTD6N20E MOSFET Transistor

The MTD6N20E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTD6N20E transistor as follows.

MTD6N20E Transistor Specification

Transistor Code		MTD6N20E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK4
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.46Ohm
Power Dissipation (Maximum)	PD	50W
Total Gate Charge		13.7nC

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