MTD120C10KJ4 MOSFET Transistor

The MTD120C10KJ4 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTD120C10KJ4 transistor as follows.

MTD120C10KJ4 Transistor Specification

Transistor Code		MTD120C10KJ4
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO-252-4L
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.2(8.9)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125(0.103)Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		43(126)pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7(11)nS

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