MTC5806Q8 MOSFET Transistor

The MTC5806Q8 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTC5806Q8 transistor as follows.

MTC5806Q8 Transistor Specification

Transistor Code		MTC5806Q8
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5(3.5)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037(0.07)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		45(49)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12(8)nS

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