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MTC3585G6 MOSFET Transistor

The MTC3585G6 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTC3585G6 transistor as follows.

Circuit diagram symbol of the MTC3585G6 transistor

MTC3585G6 Transistor Specification

Transistor Code MTC3585G6
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TSOP-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.5(3)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027(0.078)Ohm
Power Dissipation (Maximum) PD 1.14W
Drain-Source Capacitance 50(45)pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8(17)nS

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