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MTBC7N10N3 MOSFET Transistor

The MTBC7N10N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBC7N10N3 transistor as follows.

Circuit diagram symbol of the MTBC7N10N3 transistor

MTBC7N10N3 Transistor Specification

Transistor Code MTBC7N10N3
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.389Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 13pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS

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