MTBB5B10Q8 MOSFET Transistor

The MTBB5B10Q8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBB5B10Q8 transistor as follows.

MTBB5B10Q8 Transistor Specification

Transistor Code		MTBB5B10Q8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		365pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS

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