MTBB0P10L3 MOSFET Transistor

The MTBB0P10L3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBB0P10L3 transistor as follows.

MTBB0P10L3 Transistor Specification

Transistor Code		MTBB0P10L3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.171Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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