MTBA6C15J4 MOSFET Transistor

The MTBA6C15J4 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBA6C15J4 transistor as follows.

MTBA6C15J4 Transistor Specification

Transistor Code		MTBA6C15J4
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO-252-4L
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.225Ohm
Power Dissipation (Maximum)	PD	37.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.2nS
Gate-Threshold Voltage (Maximum)		2.4V

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