MTBA6C12Q8 MOSFET Transistor

The MTBA6C12Q8 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBA6C12Q8 transistor as follows.

MTBA6C12Q8 Transistor Specification

Transistor Code		MTBA6C12Q8
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	6W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.2nS
Gate-Threshold Voltage (Maximum)		2.3V

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