MTBA5C10V8 MOSFET Transistor

The MTBA5C10V8 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBA5C10V8 transistor as follows.

MTBA5C10V8 Transistor Specification

Transistor Code		MTBA5C10V8
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.155Ohm
Power Dissipation (Maximum)	PD	3.75W
Drain-Source Capacitance		31pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.6nS
Gate-Threshold Voltage (Maximum)		2.5V

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