MTBA5C10AQ8 MOSFET Transistor

The MTBA5C10AQ8 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTBA5C10AQ8 transistor as follows.

MTBA5C10AQ8 Transistor Specification

Transistor Code		MTBA5C10AQ8
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.4(2.2)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0121(0.167)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		38(56)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9(10)nS

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