MTB90P06J3 MOSFET Transistor

The MTB90P06J3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB90P06J3 transistor as follows.

MTB90P06J3 Transistor Specification

Transistor Code		MTB90P06J3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		51pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS

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