MTB6D0N03ATV8 MOSFET Transistor

The MTB6D0N03ATV8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB6D0N03ATV8 transistor as follows.

MTB6D0N03ATV8 Transistor Specification

Transistor Code		MTB6D0N03ATV8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0067Ohm
Power Dissipation (Maximum)	PD	21W
Drain-Source Capacitance		141pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS

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