MTB60P15H8 MOSFET Transistor

The MTB60P15H8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB60P15H8 transistor as follows.

MTB60P15H8 Transistor Specification

Transistor Code		MTB60P15H8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2V

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