MTB60P06E3 MOSFET Transistor

The MTB60P06E3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB60P06E3 transistor as follows.

MTB60P06E3 Transistor Specification

Transistor Code		MTB60P06E3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.057Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		72pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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