MTB600N03N3 MOSFET Transistor

The MTB600N03N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB600N03N3 transistor as follows.

MTB600N03N3 Transistor Specification

Transistor Code		MTB600N03N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.448Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		7.37pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17.4nS

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