MTB5D0P03Q8 MOSFET Transistor

The MTB5D0P03Q8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB5D0P03Q8 transistor as follows.

MTB5D0P03Q8 Transistor Specification

Transistor Code		MTB5D0P03Q8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	6.3W
Drain-Source Capacitance		849pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25.6nS
Gate-Threshold Voltage (Maximum)		2.5V

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