MTB5D0P03J3 MOSFET Transistor

The MTB5D0P03J3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB5D0P03J3 transistor as follows.

MTB5D0P03J3 Transistor Specification

Transistor Code		MTB5D0P03J3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	88A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		739pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21.6nS
Gate-Threshold Voltage (Maximum)		2.5V

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