MTB50P03HDLT4G MOSFET Transistor

The MTB50P03HDLT4G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB50P03HDLT4G transistor as follows.

MTB50P03HDLT4G Transistor Specification

Transistor Code		MTB50P03HDLT4G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Transistor SMD Code		MTB50P03H
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		340nS
Gate-Threshold Voltage (Maximum)		2V

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