MTB40P06Q8 MOSFET Transistor

The MTB40P06Q8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB40P06Q8 transistor as follows.

MTB40P06Q8 Transistor Specification

Transistor Code		MTB40P06Q8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		98.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.2nS
Total Gate Charge		38.7nC

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