MTB3D0N03BH8 MOSFET Transistor

The MTB3D0N03BH8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB3D0N03BH8 transistor as follows.

MTB3D0N03BH8 Transistor Specification

Transistor Code		MTB3D0N03BH8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		419pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19.2nS
Gate-Threshold Voltage (Maximum)		2.5V

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