MTB30P06VT4 MOSFET Transistor

The MTB30P06VT4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB30P06VT4 transistor as follows.

MTB30P06VT4 Transistor Specification

Transistor Code		MTB30P06VT4
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		524pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25.9nS
Gate-Threshold Voltage (Maximum)		4V

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