MTB2P50ET4G MOSFET Transistor

The MTB2P50ET4G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB2P50ET4G transistor as follows.

MTB2P50ET4G Transistor Specification

Transistor Code		MTB2P50ET4G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Transistor SMD Code		T2P50E
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V

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