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MTB25P06FP MOSFET Transistor

The MTB25P06FP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB25P06FP transistor as follows.

Circuit diagram symbol of the MTB25P06FP transistor

MTB25P06FP Transistor Specification

Transistor Code MTB25P06FP
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-220FP
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 52A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0188Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 164pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 18nS
Total Gate Charge 62nC

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