MTB25P04V8 MOSFET Transistor

The MTB25P04V8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB25P04V8 transistor as follows.

MTB25P04V8 Transistor Specification

Transistor Code		MTB25P04V8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	21W
Drain-Source Capacitance		222pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Total Gate Charge		40nC

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