MTB25C04Q8 MOSFET Transistor

The MTB25C04Q8 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB25C04Q8 transistor as follows.

MTB25C04Q8 Transistor Specification

Transistor Code		MTB25C04Q8
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	6W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.2nS
Gate-Threshold Voltage (Maximum)		2.5V

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