MTB23P06VT4 MOSFET Transistor

The MTB23P06VT4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB23P06VT4 transistor as follows.

MTB23P06VT4 Transistor Specification

Transistor Code		MTB23P06VT4
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Transistor SMD Code		MTB23P06V
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		98.3nS
Gate-Threshold Voltage (Maximum)		4V

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