MTB20N06J3 MOSFET Transistor

The MTB20N06J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB20N06J3 transistor as follows.

MTB20N06J3 Transistor Specification

Transistor Code		MTB20N06J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0146Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Total Gate Charge		43nC

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