MTB20A06Q8 MOSFET Transistor

The MTB20A06Q8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB20A06Q8 transistor as follows.

MTB20A06Q8 Transistor Specification

Transistor Code		MTB20A06Q8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	3.75W
Drain-Source Capacitance		107pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.2nS
Gate-Threshold Voltage (Maximum)		2.5V

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