MTB1D7N03E3 MOSFET Transistor

The MTB1D7N03E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB1D7N03E3 transistor as follows.

MTB1D7N03E3 Transistor Specification

Transistor Code		MTB1D7N03E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	203A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		935pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21nS
Total Gate Charge		41nC

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