MTB12P04J3 MOSFET Transistor

The MTB12P04J3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB12P04J3 transistor as follows.

MTB12P04J3 Transistor Specification

Transistor Code		MTB12P04J3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0113Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		1330pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Total Gate Charge		50nC

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