MTB11N03Q8 MOSFET Transistor

The MTB11N03Q8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB11N03Q8 transistor as follows.

MTB11N03Q8 Transistor Specification

Transistor Code		MTB11N03Q8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0067Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		176pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.3nS

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