MTB09P04DJ3 MOSFET Transistor

The MTB09P04DJ3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09P04DJ3 transistor as follows.

MTB09P04DJ3 Transistor Specification

Transistor Code		MTB09P04DJ3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	94W
Drain-Source Capacitance		501pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		2V

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