MTB09P03J3 MOSFET Transistor

The MTB09P03J3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09P03J3 transistor as follows.

MTB09P03J3 Transistor Specification

Transistor Code		MTB09P03J3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	93W
Drain-Source Capacitance		486pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Total Gate Charge		56nC

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