MTB09P03E3 MOSFET Transistor

The MTB09P03E3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09P03E3 transistor as follows.

MTB09P03E3 Transistor Specification

Transistor Code		MTB09P03E3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		356pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		16.4nS
Gate-Threshold Voltage (Maximum)		2.5V

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