MTB09N06J3 MOSFET Transistor

The MTB09N06J3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09N06J3 transistor as follows.

MTB09N06J3 Transistor Specification

Transistor Code		MTB09N06J3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0063Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Total Gate Charge		46nC

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