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MTB09N03V8 MOSFET Transistor

The MTB09N03V8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09N03V8 transistor as follows.

Circuit diagram symbol of the MTB09N03V8 transistor

MTB09N03V8 Transistor Specification

Transistor Code MTB09N03V8
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 37.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0068Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 176pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 61nS

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