MTB09N03H8 MOSFET Transistor

The MTB09N03H8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB09N03H8 transistor as follows.

MTB09N03H8 Transistor Specification

Transistor Code		MTB09N03H8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		176pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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